DocumentCode
1675033
Title
Study of SiGe/Si heterostructure electronic devices
Author
Shen, G.D. ; Chen, J.X. ; Zou, D.S. ; Gao, G. ; Du, C.-X. ; Xu, D.X. ; Ni, W.X. ; Willander, M. ; Hansson, G.V.
Author_Institution
Dept. of Electron. Eng., Beijing Polytech. Univ., China
fYear
1995
Firstpage
439
Lastpage
443
Abstract
The research and development of SiGe/Si electronic devices are discussed. Our studies of the advanced SiGe/Si HBTs and the side-wall oxide self-aligned technique are described. A lot of experimental and theoretical results on SiGe/Si RTDs are presented, in which very different features of heavy and light hole resonant transport can be determined
Keywords
Ge-Si alloys; elemental semiconductors; heterojunction bipolar transistors; microwave bipolar transistors; resonant tunnelling devices; semiconductor materials; silicon; HBTs; RTDs; SiGe-Si; heavy hole resonant transport; heterostructure electronic devices; light hole resonant transport; side-wall oxide self-aligned technique; Councils; Cutoff frequency; Doping profiles; Germanium silicon alloys; Heterojunction bipolar transistors; Physics; Plasma temperature; Research and development; Silicon germanium; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid-State and Integrated Circuit Technology, 1995 4th International Conference on
Conference_Location
Beijing
Print_ISBN
0-7803-3062-5
Type
conf
DOI
10.1109/ICSICT.1995.500189
Filename
500189
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