DocumentCode
1676025
Title
A packaged 2.3 GHz SiGe VCO with parallel-branch inductors
Author
Lee, Ja-Yol ; Suh, Dongwoo ; Lee, Sang-Heung ; Lee, Seung-Yun ; Park, Chan-Woo ; Kim, Sang Hoon ; Shim, Kyu-Hwan ; Kang, Jin-Young ; Cho, Kyoung-Ik ; Oh, Seung Hyeub
fYear
2003
Firstpage
655
Lastpage
658
Abstract
In this paper, a 2.3 GHz VCO with parallel-branch inductors was designed and fabricated using 0.8-μm SiGe HBT process technology. Their Q-factors were higher than those of the conventional inductors. A good phase noise of -122 dBc/Hz was measured at 4 MHz offset frequency, and harmonics were suppressed by -28 dBc. The manufactured VCO core consumed 3.7 mA at 2 V supply voltage, and the VCO occupied 1.8 mm × 1.2 mm chip areas.
Keywords
Ge-Si alloys; Q-factor; UHF integrated circuits; UHF oscillators; bipolar MMIC; circuit tuning; heterojunction bipolar transistors; inductors; phase noise; semiconductor materials; voltage-controlled oscillators; 0.8 micron; 2 V; 2.3 GHz; 3.7 mA; HBT; Q-factors; SiGe; VCO; chip areas; harmonics; parallel-branch inductors; phase noise; process technology; Frequency measurement; Germanium silicon alloys; Heterojunction bipolar transistors; Inductors; Noise measurement; Packaging; Phase noise; Q factor; Silicon germanium; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Radio Frequency Integrated Circuits (RFIC) Symposium, 2003 IEEE
ISSN
1529-2517
Print_ISBN
0-7803-7694-3
Type
conf
DOI
10.1109/RFIC.2003.1214032
Filename
1214032
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