Analysis of loss and junction temperature in power semiconductors of the matrix converter using simple simulation methods

Author

Odaka, Akihiro ; Itoh, Jun-Ichi ; Sato, Ikuya ; Ohguchi, Hideki ; Kodachi, Hirokazu ; Eguchi, Naoya ; Umida, Hidetoshi

Author_Institution

Electron. Technol. Laboratory, Fuji Electr. Adv. Technol. Co., Ltd., Tokyo, Japan

Volume

2

fYear

2004

Firstpage

850

Abstract

In this paper, simple simulation methods to calculate power semiconductor loss and instantaneous junction - case temperature difference in a power module of a matrix converter are proposed. The validity of the proposed simulation method for loss calculation is confirmed through experiment using a 22 kW test set-up of the matrix converter. By using the simulation method for temperature calculating, the influence of the output frequency on the junction - case temperature difference is investigated. Moreover, the effect of using a novel IGBT (RB-IGBT) that has reverse blocking capability is discussed. It is shown that the efficiency of a matrix converter using the RB-IGBT is higher by 1.3 points than that of a conventional PWM rectifier and inverter system.

Keywords

insulated gate bipolar transistors; losses; matrix convertors; power bipolar transistors; 22 kW; RB-IGBT; case temperature difference; matrix converter; power semiconductor junction temperature; power semiconductor loss; reverse blocking IGBT; Analytical models; Frequency; Insulated gate bipolar transistors; Matrix converters; Multichip modules; Pulse width modulation converters; Pulse width modulation inverters; Rectifiers; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2004. 39th IAS Annual Meeting. Conference Record of the 2004 IEEE

ISSN

0197-2618

Print_ISBN

0-7803-8486-5

Type

conf

DOI

10.1109/IAS.2004.1348512

Filename

1348512