1 MHz power factor correction boost converter with SiC Schottky diode

Author

Jeannin, P-O. ; Frey, D. ; Podvin, J.-C. ; Ferrieux, J.-P. ; Barbaroux, J. ; Schanen, J.-L. ; Rivet, B.

Author_Institution

Laboratoire d´´Electrotechnique de Grenoble, CNRS, Grenoble, France

Volume

2

fYear

2004

Firstpage

1267

Abstract

This paper deals with the design of 1 MHz switching frequency boost convert with silicon carbide power Schottky diodes. This application is designed to work as a power factor correction rectifier. With high breakdown voltage, high energy gap and good thermal conductivity, silicon carbide (SiC) is a serious challenger as a new power semiconductor material. Here we analyze switching behavior in order to evaluate losses in such applications. Then, we compare theoretical and experimental results on PFC boost application.

Keywords

Schottky diodes; power factor correction; power semiconductor diodes; rectifiers; silicon compounds; switching convertors; wide band gap semiconductors; 1 MHz; SiC; power factor correction rectifier; power semiconductor material; silicon carbide power Schottky diodes; switching frequency boost convert; thermal conductivity; Electromagnetic interference; MOSFET circuits; Power factor correction; Rectifiers; Schottky diodes; Semiconductor materials; Silicon carbide; Switching frequency; Thermal conductivity; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Industry Applications Conference, 2004. 39th IAS Annual Meeting. Conference Record of the 2004 IEEE

ISSN

0197-2618

Print_ISBN

0-7803-8486-5

Type

conf

DOI

10.1109/IAS.2004.1348575

Filename

1348575