DocumentCode
1679598
Title
Analysis of symmetric-varactor-frequency triplers
Author
Krishnamurthi, K. ; Harrison, R.G.
Author_Institution
Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
fYear
1993
Firstpage
649
Abstract
A simple analytical model for varactors that have a symmetric capacitance-voltage characteristic is introduced. This empirical but general model can be used to represent the reactance nonlinearity of quantum-barrier varactors, symmetric high-electron-mobility varactors, and back-to-back barrier-n-n/sup +/ diodes. Using this model, a generalized large-signal analysis of symmetric-varactor triplers is developed. The analysis yields an expression for the maximum efficiency. The results show that the optimized efficiencies at low input power levels are greater than those possible for conventional varactors having similar cutoff frequencies and breakdown voltages. It is further shown that a series-resonant circuit including a symmetric varactor can be described by Duffing´s equation. The solution of this equation predicts hysteresis effects.<>
Keywords
equivalent circuits; frequency multipliers; hysteresis; nonlinear network analysis; semiconductor device models; solid-state microwave circuits; solid-state microwave devices; varactors; BNN/sup +/ diodes; Duffing´s equation; analytical model; back-to-back barrier-n-n/sup +/ diodes; high-electron-mobility varactors; hysteresis effects; large-signal analysis; maximum efficiency; quantum-barrier varactors; reactance nonlinearity; series-resonant circuit; symmetric capacitance-voltage characteristic; symmetric-varactor-frequency triplers; Analytical models; Capacitance-voltage characteristics; Circuits; Contact resistance; Diodes; Frequency; Hysteresis; Nonlinear equations; Varactors; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1993., IEEE MTT-S International
Conference_Location
Atlanta, GA, USA
ISSN
0149-645X
Print_ISBN
0-7803-1209-0
Type
conf
DOI
10.1109/MWSYM.1993.276990
Filename
276990
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