DocumentCode
1680033
Title
Robust Inductor Design for RF Circuits
Author
Lu, Yin-Lung Ryan ; Lee, Yung-Huei ; McMahon, William J. ; Fung, Tze-Ching
Author_Institution
Intel Corp., Santa Clara, CA
fYear
2006
Firstpage
571
Lastpage
574
Abstract
Design of monolithic spiral inductors with electromigration (EM) robustness has been demonstrated. By adding small metal reservoir structures in the underpass area, inductor EM lifetime can be significantly improved. Measurements showed that the metal reservoir structures do not have an impact on inductor Q and inductance. Adding these structures hence allows more aggressive and scalable RF IC design
Keywords
electromigration; inductors; integrated circuit design; radiofrequency integrated circuits; RF circuits; electromigration robustness; monolithic spiral inductors; robust inductor design; Degradation; Electromigration; Inductors; Radio frequency; Radiofrequency integrated circuits; Reservoirs; Robustness; Spirals; Stress; Voltage-controlled oscillators;
fLanguage
English
Publisher
ieee
Conference_Titel
Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
Conference_Location
San Jose, CA
Print_ISBN
1-4244-0075-9
Electronic_ISBN
1-4244-0076-7
Type
conf
DOI
10.1109/CICC.2006.320993
Filename
4115024
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