• DocumentCode
    1680659
  • Title

    A 104dB SNDR Transimpedance-based CMOS ASIC for Tuning Fork Microgyroscopes

  • Author

    Sharma, Ajit ; Zaman, M. Faisal ; Ayazi, Farrokh

  • Author_Institution
    Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA
  • fYear
    2006
  • Firstpage
    655
  • Lastpage
    658
  • Abstract
    A CMOS ASIC has been designed and interfaced with a high Q MEMS gyroscope to yield an angular rate sensor with a 1.2deg/hr noise floor and 2mV/deg/s rate sensitivity. A T-network transimpedance amplifier (TIA) has been implemented with a measured capacitive resolution of 0.04aF/radicHz, an SNDR of 104dB and which consumes ~ 400muW of power. The TIA also provides large on-chip transimpedance and can sustain oscillations in MEMS gyroscopes with motional impedances greater than 100MOmega
  • Keywords
    CMOS analogue integrated circuits; application specific integrated circuits; gyroscopes; micromechanical devices; operational amplifiers; vibrations; 400 muW; CMOS ASIC; T-network transimpedance amplifier; angular rate sensor; high Q MEMS gyroscope; tuning fork microgyroscopes; Acceleration; Application specific integrated circuits; Circuit topology; Costs; Electrodes; Gyroscopes; Impedance; Micromechanical devices; Power measurement; Vibrations;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Custom Integrated Circuits Conference, 2006. CICC '06. IEEE
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    1-4244-0075-9
  • Electronic_ISBN
    1-4244-0076-7
  • Type

    conf

  • DOI
    10.1109/CICC.2006.320866
  • Filename
    4115043