A 7 to 11 GHz AlInAs/GaInAs/InP MMIC low noise amplifier

Author

Rosenbaum, S.E. ; Chou, C.S. ; Ngo, C.M. ; Larson, L.E. ; Liu, T. ; Thompson, M.A.

Author_Institution

Hughes Res. Lab., Malibu, CA, USA

fYear

1993

Firstpage

1103

Abstract

Two-stage monolithic microwave integrated circuit (MMIC) low-noise amplifiers (LNAs) have been fabricated using 0.15- mu m gate-length InP-based AlInAs/GaInAs high electron mobility transistors (HEMTs). The LNAs showed less than 1.2-dB noise figure and 21-22-dB gain over the 7-11-GHz band. These results are believed to be the best reported to date for a broadband MMIC amplifier at these frequencies. The authors describe the fabrication technology, the design procedure, and the experimental results.<>

Keywords

III-V semiconductors; MMIC; aluminium compounds; field effect integrated circuits; gallium arsenide; indium compounds; microwave amplifiers; wideband amplifiers; 0.15 micron; 21 to 22 dB; 7 to 11 GHz; AlInAs-GaInAs-InP; MMIC low noise amplifier; broadband MMIC amplifier; design procedure; fabrication technology; high electron mobility transistors; Broadband amplifiers; HEMTs; Indium phosphide; Integrated circuit noise; Low-noise amplifiers; MMICs; MODFETs; Microwave integrated circuits; Monolithic integrated circuits; Noise figure;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1993., IEEE MTT-S International

Conference_Location

Atlanta, GA, USA

ISSN

0149-645X

Print_ISBN

0-7803-1209-0

Type

conf

DOI

10.1109/MWSYM.1993.277060

Filename

277060