Predictive modeling of SiC-device power Schottky diode for investigations in power electronics

Author

Kneifel, M. ; Silber, D. ; Held, R.

Author_Institution

Inst. for Electr. Drives, Power Electron. & Electron. Devices, Bremen Univ., Germany

Volume

1

fYear

1996

Firstpage

239

Abstract

A predictive electrical-thermal model for a silicon carbide (SIC) power Schottky diode based on semiconductor device equations and measured results has been developed for prospective behavior investigations of this device in different power electronic circuits. The model has been implanted in the circuit simulator SABER and is suitable to simulate static and switching power dissipation, EMI effects and several device failure modes

Keywords

Schottky diodes; circuit analysis computing; power engineering computing; power semiconductor diodes; power semiconductor switches; semiconductor device models; software packages; thermal analysis; EMI effects; SABER; SiC; circuit simulator; device failure modes; power Schottky diode; power electronic circuits; predictive electrical-thermal model; prospective behavior; semiconductor device equations; static power dissipation; switching power dissipation; Circuit simulation; Differential equations; Electric variables measurement; Power electronics; Power measurement; Predictive models; Schottky diodes; Semiconductor device measurement; Semiconductor devices; Silicon carbide;

fLanguage

English

Publisher

ieee

Conference_Titel

Applied Power Electronics Conference and Exposition, 1996. APEC '96. Conference Proceedings 1996., Eleventh Annual

Conference_Location

San Jose, CA

Print_ISBN

0-7803-3044-7

Type

conf

DOI

10.1109/APEC.1996.500449

Filename

500449