DocumentCode
1682858
Title
Ring Oscillator Performance and Parasitic Extraction Simulation in Finfet Technology
Author
Kulkarni, Mak ; Marshall, Andrew ; Cleavelin, C. Rinn ; Xiong, Weize ; Pacha, Christian ; von Armin, K. ; Schulz, Thomas ; Schruefer, Klaus ; Patruno, Paul
Author_Institution
Texas Instruments Inc., Dallas, TX
fYear
2006
Firstpage
123
Lastpage
126
Abstract
Correlation of a full parasitic extracted simulation using StarRC and SPICE to silicon is demonstrated for fully depleted (FD) FinFET silicon-on-insulator ring oscillators. The results indicate similar accuracy can be expected as obtained from bulk simulations. This is important in integrated circuit development, as the accurate simulation of circuit performance is imperative to IC development
Keywords
MOSFET; SPICE; circuit simulation; oscillators; silicon-on-insulator; FinFET; SPICE; Si; StarRC; integrated circuit development; parasitic extraction simulation; silicon-on-insulator ring oscillator; Circuit simulation; Contacts; Etching; FinFETs; Integrated circuit interconnections; Inverters; MOS devices; Ring oscillators; Semiconductor films; Silicon;
fLanguage
English
Publisher
ieee
Conference_Titel
Design, Applications, Integration and Software, 2006 IEEE Dallas/CAS Workshop on
Conference_Location
Richardson, TX
Print_ISBN
1-4244-0670-6
Electronic_ISBN
1-4244-0670-6
Type
conf
DOI
10.1109/DCAS.2006.321049
Filename
4115128
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