• DocumentCode
    1683328
  • Title

    Recent Advances in AlInsAs Avalanche Photodiodes

  • Author

    Yagyu, E. ; Ishimura, E. ; Nakaji, M. ; Itamoto, H. ; Aoyagi, T. ; Yoshiara, K. ; Tokuda, Y.

  • Author_Institution
    Mitsubishi Electr. Corp., Amagasaki
  • fYear
    2007
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    We present practical planar AlInAs APDs, which have large gain-bandwidth products, low noise, and high reliability. The APD receivers had a sensitivity of-28.6 dBm at 10 Gb/s and -37.0 dBm at 2.5 Gb/s.
  • Keywords
    III-V semiconductors; aluminium compounds; avalanche photodiodes; indium compounds; wide band gap semiconductors; AlInAs; avalanche photodiode; bit rate 10 Gbit/s; bit rate 2.5 Gbit/s; high reliability device; large gain-bandwidth; low noise photodiode; Absorption; Aging; Avalanche photodiodes; Dark current; Distributed Bragg reflectors; Indium phosphide; Optical receivers; P-n junctions; Substrates; Zinc;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Optical Fiber Communication and the National Fiber Optic Engineers Conference, 2007. OFC/NFOEC 2007. Conference on
  • Conference_Location
    Anaheim, CA
  • Print_ISBN
    1-55752-831-4
  • Type

    conf

  • DOI
    10.1109/OFC.2007.4348674
  • Filename
    4348674
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1683328