A SiGe HBT power amplifier with integrated mode control switches for LTE applications

Author

Jonghun Jung ; Geunyong Lee ; Jong-In Song

Author_Institution

Dept. of Nanobio Mater. & Electron., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea

fYear

2013

Firstpage

238

Lastpage

240

Abstract

A SiGe HBT mode switching power amplifier (PA) for 835MHz long-term-evolution (LTE) applications has been realized in a BiCMOS technology. The PA has dual 2-stage PAs optimized for operations at high and low power levels. The mode of operation is controlled by NMOS switches integrated with the SiGe HBT PA. The PA shows a power added efficiency (PAE) of 28.3% and an adjacent channel leakage ration (ACLR) of -30.5dBc at the output power of 26dBm. At the low Pout of 16dBm, the PA shows a PAE of 15.8% and an ACLR of -29.7dBc. The PA shows substantially improved efficiency at low power mode operation.

Keywords

BiCMOS analogue integrated circuits; Ge-Si alloys; Long Term Evolution; heterojunction bipolar transistors; power amplifiers; 2-stage PA; ACLR; BiCMOS technology; HBT power amplifier; LTE application; Long-Term-Evolution application; NMOS switches; SiGe; adjacent channel leakage ration; integrated mode control switches; power added efficiency; BiCMOS integrated circuits; CMOS integrated circuits; Heterojunction bipolar transistors; Power amplifiers; Silicon germanium; Switches; SiGe power amplifier (PA); long-term evolution (LTE); mode switching;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium (RWS), 2013 IEEE

Conference_Location

Austin, TX

ISSN

2164-2958

Print_ISBN

978-1-4673-2929-3

Electronic_ISBN

2164-2958

Type

conf

DOI

10.1109/RWS.2013.6486700

Filename

6486700