A 4-bit SiGe passive phase shifter for X-band phased arrays

Author

Kalyoncu, I. ; Ozeren, Emre ; Kaynak, Mehmet ; Gurbuz, Yasar

Author_Institution

Fac. of Eng. & Natural Sci. -FENS, Sabanci Univ., Istanbul, Turkey

fYear

2013

Firstpage

310

Lastpage

312

Abstract

This paper presents a 4-bit passive phase shifter for X-band (8-12 GHz) phased-arrays, implemented in 0.25-μm SiGe BiCMOS process. All bits are digitally controlled. The 22.5° and 45° bits are based on switched low-pass network while the 90° and 180° bits are based on switching between high-pass/low-pass filters. Filters are implemented using on-chip spiral inductors and high-Q MIM capacitors. Switching functionality is obtained by isolated NMOS transistors employing resistive body floating technique. All bits are optimized to minimize the RMS phase error. Ordering of bits is optimized so as to minimize the overall insertion loss. Simulated insertion loss is 12±2 dB and RMS phase error is less than 2° over X-band frequencies.

Keywords

BiCMOS digital integrated circuits; Ge-Si alloys; MIM devices; MOSFET; capacitors; digital control; high-pass filters; inductors; low-pass filters; microwave phase shifters; NMOS transistors; RMS phase error; SiGe; SiGe BiCMOS process; SiGe passive phase shifter; X-band frequency; X-band phased arrays; digitally control bits; frequency 8 GHz to 12 GHz; high pass-low pass filters; high-Q MIM capacitor; insertion loss; onchip spiral inductor; resistive body floating technique; size 0.25 mum; storage capacity 4 bit; switched low-pass network; BiCMOS integrated circuits; Frequency measurement; Insertion loss; Loss measurement; Phase measurement; Phase shifters; Silicon germanium; Phase shifter; SiGe BiCMOS; T/R module; X-band; phased array;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio and Wireless Symposium (RWS), 2013 IEEE

Conference_Location

Austin, TX

ISSN

2164-2958

Print_ISBN

978-1-4673-2929-3

Electronic_ISBN

2164-2958

Type

conf

DOI

10.1109/RWS.2013.6486724

Filename

6486724