DocumentCode
1686054
Title
Recent Advances in Germanium Quantum Well Structures - A New Modulation Mechanism for Silicon-Compatible Optics
Author
Miller, David A. B.
Author_Institution
Stanford Univ., Stanford
fYear
2007
Firstpage
1
Lastpage
27
Abstract
Silicon technology increasingly can implement both electronics and optics for communications. The recent discovery of strong electroabsorption in Ge quantum wells on silicon may fill a key gap, allowing a merged technology for many applications.
Keywords
electro-optical modulation; electroabsorption; elemental semiconductors; germanium; optical communication equipment; quantum well devices; semiconductor devices; semiconductor quantum wells; Ge - Interface; electroabsorption; germanium quantum well structures; modulation mechanism; optical communication; Germanium; Optical crosstalk; Optical devices; Optical interconnections; Optical modulation; Photonics; Silicon; Stark effect; Transistors; Wiring;
fLanguage
English
Publisher
ieee
Conference_Titel
Optical Fiber Communication and the National Fiber Optic Engineers Conference, 2007. OFC/NFOEC 2007. Conference on
Conference_Location
Anaheim, CA
Print_ISBN
1-55752-831-4
Type
conf
DOI
10.1109/OFC.2007.4348777
Filename
4348777
Link To Document