Simulation and characterization of ion irradiated 4H-SiC JBS diode

This paper presents the development of simulation models for proton and carbon irradiated 4H-SiC junction barrier Schottky (JBS) diodes. Compared to protons, heavier carbon ions introduce more defects with deeper levels in the SiC bandgap and more stable damage. For the first time, the free carrier concentration profile extracted from CV simulations for irradiated JBS diode has been compared with experimental data. The simulation exhibit excellent matching with experimental data and can be very useful for the optimization of SiC power devices. Furthermore, the developed model can be used for the simulation of carrier life time control in PiN diode.