Deformation sensitivity mechanisms of molybdenum-silicon Schottky diodes

The influence of uniaxial deformation on Mo-nn⁺Si Schottky diode reverse I-U characteristics has been investigated. Strain sensitivity of the reverse current is shown to be connected with the degree of imperfection of the silicon layer near the surface. The highest strain sensitivity is found in the diodes, whose silicon layer near the surface contains local dislocation clusters of increased density. This is associated with the resonant tunneling current flowing in the diodes, whose dependence on the strain and bias voltage is stronger than that of the thermionic current