Design and pull-in voltage optimization of series metal-to-metal contact RF MEMS switch

Author

Angira, Mahesh ; Sundram, G. Meenakshi ; Rangra, Kamaljit

Author_Institution

Dept. of EEE, BITS Pilani, Pilani, India

fYear

2012

Firstpage

1

Lastpage

4

Abstract

This paper presents the design, analysis and simulation of metal-to metal contact series rf-MEMS switch for its pull-in voltage optimization. Fixed - fixed flexure is used as a switching element and the Pull-in voltage is optimized for generating a force to obtain a stable contact resistance. Au is used as the contact material. The simulated value of the pull-in voltage (V_pi) is approximately 10.20 V. At the pull-in voltage the area occupied under contact is 8.89 μm² and the value of contact force is 1.84 μN. The switch pull-in voltage value is optimized at a value of 23 V giving contact area of 924 μm² and contact force of 31.55 μN.

Keywords

electrical contacts; microswitches; contact force; fixed flexure; pull-in voltage optimization; series metal-to-metal contact RF MEMS switch; stable contact resistance; switch pull-in voltage value; switching element; Contacts; Force; Materials; Micromechanical devices; Microswitches; Radio frequency; Electrostatic actuation; Pull-in voltage; RF-MEMS; Series switch;

fLanguage

English

Publisher

ieee

Conference_Titel

Computing, Communication and Applications (ICCCA), 2012 International Conference on

Conference_Location

Dindigul, Tamilnadu

Print_ISBN

978-1-4673-0270-8

Type

conf

DOI

10.1109/ICCCA.2012.6179150

Filename

6179150