• DocumentCode
    1690839
  • Title

    New structure of field-controlled thyristor with lateral channel

  • Author

    Haidong, Zheng ; Runtao, Ye ; Xinming, Lin ; Min, Chen

  • Author_Institution
    Dept. of Inf. & Electron. Eng., Zhejiang Univ., Hangzhou, China
  • fYear
    1992
  • Firstpage
    725
  • Abstract
    The authors describe a new structure of field-controlled thyristor with a lateral channel (LFCT) which has been developed successfully. This device possesses of some advantages, such as manufacture simplicity, high blocking gain, high switching speed and compatibility with ICs in monolithic mode
  • Keywords
    switching circuits; thyristors; blocking gain; field-controlled thyristor; lateral channel; manufacture; switching speed; Anodes; Cathodes; High speed integrated circuits; Leakage current; Manufacturing; Microwave devices; Microwave technology; PIN photodiodes; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial Electronics, 1992., Proceedings of the IEEE International Symposium on
  • Conference_Location
    Xian
  • Print_ISBN
    0-7803-0042-4
  • Type

    conf

  • DOI
    10.1109/ISIE.1992.279699
  • Filename
    279699