• DocumentCode
    1690888
  • Title

    High-order sideband generation in quantum wells driven by intense THz radiation: Electron-hole recollisions

  • Author

    Zaks, Benjamin ; Liu, Ren-Bao ; Sherwin, Mark S.

  • Author_Institution
    Dept. of Phys., Univ. of California at Santa Barbara, Santa Barbara, CA, USA
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    2
  • Abstract
    When optically excited excitons in InGaAs quantum wells are driven by an intense THz field, electron-hole recollisions occur and sidebands of up to 18th order are observed.
  • Keywords
    III-V semiconductors; electron-hole recombination; excitons; gallium arsenide; semiconductor quantum wells; GaAs; THz radiation; electron-hole recollision; high order sideband generation; optically excited exciton; quantum well; Amplitude modulation; Excitons; Free electron lasers; Laser excitation; Nonlinear optics; Optical harmonic generation; Physics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics (CLEO), 2012 Conference on
  • Conference_Location
    San Jose, CA
  • Print_ISBN
    978-1-4673-1839-6
  • Type

    conf

  • Filename
    6327072
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1690888