A novel 0.16 μm — 300 V SOIBCD for ultrasound medical applications

Author

Sambi, M. ; Merlini, D. ; Galbiati, P. ; Bonera, E. ; Belletti, F.

Author_Institution

STMicroelectron. TRD, Agrate Brianza, Italy

fYear

2011

Firstpage

36

Lastpage

39

Abstract

The development of a new 0.16 μm SOIBCD technology integrating components with breakdown voltage higher than 300 V is here described. Process integration and mechanical stress due to buried oxide and lateral dielectric isolation was investigated with TCAD simulations, morphological analysis and Raman spectroscopy measurements. Component portfolio was derived from existing junction isolated (JI) 0.16 μm technologies and expanded with high voltage MOS. Stress induced by the full dielectric isolation is far from critical values. Breakdown voltages over 350 V were measured.

Keywords

CMOS integrated circuits; MOS integrated circuits; biomedical electronics; biomedical ultrasonics; silicon-on-insulator; Raman spectroscopy measurements; SOIBCD technology; TCAD simulations; bipolar-CMOS-DMOS; breakdown voltage; buried oxide; lateral dielectric isolation; mechanical stress; morphological analysis; process integration; ultrasound medical applications; Application specific integrated circuits; Diffusion tensor imaging; Performance evaluation; Silicon; Stress; Stress measurement; Ultrasonic imaging;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on

Conference_Location

San Diego, CA

ISSN

1943-653X

Print_ISBN

978-1-4244-8425-6

Type

conf

DOI

10.1109/ISPSD.2011.5890784

Filename

5890784