Novel high voltage LDMOS on partial SOI with double-sided charge trenches

Author

Luo, Xiaorong ; Wang, Y.G. ; Lei, T.F. ; Lei, L. ; Fu, D.P. ; Yao, G.L. ; Qiao, M. ; Zhang, Bo ; Li, Zhaoji

Author_Institution

State Key Lab. of Electron. Thin Films & Integrated Devices, Univ. of Electron. Sci. & Technol. of China, Chengdu, China

fYear

2011

Firstpage

76

Lastpage

79

Abstract

A novel partial silicon-on-insulator (PSOI) high-voltage LDMOS is proposed and its breakdown mechanism is investigated numerically and experimentally. The PSOI LDMOS features double-sided charge trenches on the top and bottom interfaces of the buried oxide (BOX) (DTPSOI). In high-voltage blocking state, the charges located in the trenches enhance the electric field strength in the BOX, and a Si window makes the substrate share the vertical voltage drop and modulates the lateral field in the SOI layer. Both increase the blocking voltage (BV). A BV>;700V DTPSOI LDMOS is realized on a 8μm-thick SOI layer over the 1.2μm BOX and 1.5μm-deep trench. Moreover, the Si window alleviates the self-heating effect.

Keywords

MOSFET; power semiconductor devices; silicon-on-insulator; SOI layer; Si window; breakdown mechanism; buried oxide; double-sided charge trenches; electric field strength; high-voltage blocking state; novel partial silicon-on-insulator high-voltage LDMOS; partial SOI; self-heating effect; size 1.2 mum to 8 mum; vertical voltage drop; Charge carrier processes; Electric breakdown; Electric fields; Neodymium; Silicon; Silicon on insulator technology; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on

Conference_Location

San Diego, CA

ISSN

1943-653X

Print_ISBN

978-1-4244-8425-6

Type

conf

DOI

10.1109/ISPSD.2011.5890794

Filename

5890794