• DocumentCode
    1691894
  • Title

    Edge termination impact on clamped inductive turn-off failure in high-voltage IGBTs under overcurrent conditions

  • Author

    Perpiñà, X. ; Cortés, I. ; Urresti-Ibañez, J. ; Jordà, X. ; Rebollo, J. ; Millán, J.

  • Author_Institution
    Inst. de Microelectron. de Barcelona IMB-CNM (CSIC), Bellaterra, Spain
  • fYear
    2011
  • Firstpage
    112
  • Lastpage
    115
  • Abstract
    This work provides a physical insight into the failure of high-voltage IGBT modules for railway traction when an overload current event occurs during a clamped inductive turn-off. The inspection of failed IGBTs in power modules coming from the field reveals burnt-out points in the vicinity of the device edge termination. This physical signature has been also verified by experimental tests. To explore this result, physical TCAD simulations have been carried out considering, for the first time, the electro-thermal mismatch introduced by the edge termination. From simulation and experimental results, a destructive dynamic avalanche phenomenon at the last IGBT cell is identified as responsible for the observed failure.
  • Keywords
    CAD; insulated gate bipolar transistors; TCAD simulations; clamped inductive turn-off failure; destructive dynamic avalanche phenomenon; device edge termination; edge termination impact; electro-thermal mismatch; high-voltage IGBT modules; power modules; railway traction; Electric breakdown; Electric fields; Insulated gate bipolar transistors; Integrated circuits; Multichip modules; Rail transportation; Semiconductor diodes;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on
  • Conference_Location
    San Diego, CA
  • ISSN
    1943-653X
  • Print_ISBN
    978-1-4244-8425-6
  • Type

    conf

  • DOI
    10.1109/ISPSD.2011.5890803
  • Filename
    5890803