A bandgap circuit operating up to 300°C using lateral bipolar transistors in thin-film CMOS-SOI technology

Author

Adriaensen, S. ; Dessard, V. ; Flandre, Denis

Author_Institution

Microelectron. Lab., Univ. Catholique de Louvain, Belgium

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

49

Lastpage

51

Abstract

A voltage reference circuit with 3V output has been designed and implemented in a SOI (Silicon-On-Insulator) FD (Fully-Depleted) CMOS technology for very wide temperature range applications. The design integrates thin-film lateral bipolar transistors and diffusion resistors. The circuit has been fabricated and tested over the full operating temperature range (25°C-300°C) and features a temperature coefficient lower than 100 ppm/°C

Keywords

CMOS analogue integrated circuits; bipolar transistor circuits; energy gap; high-temperature electronics; reference circuits; silicon-on-insulator; 25 to 300 C; 3 V; bandgap circuit; diffusion resistor; high temperature operation; lateral bipolar transistor; thin-film FD-CMOS-SOI technology; voltage reference circuit; Bipolar transistors; CMOS technology; Circuit testing; Photonic band gap; Resistors; Silicon on insulator technology; Temperature distribution; Thin film circuits; Thin film transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

High Temperature Electronics, 1999. HITEN 99. The Third European Conference on

Conference_Location

Berlin

Print_ISBN

0-7803-5795-7

Type

conf

DOI

10.1109/HITEN.1999.827461

Filename

827461