The art of high temperature FD-SOI CMOS

Author

Demeus, L. ; Delatte, P. ; Dessard, V. ; Adriaensen, S. ; Viviani, A. ; Renaux, C. ; Flandre, D.

Author_Institution

Lab. de Microelectron., Univ. Catholique de Louvain, Belgium

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

97

Lastpage

99

Abstract

This paper presents the latest results of our research on SOI (Silicon-On-Insulator) technology for high temperature electronics. We focus on Fully-Depleted SOI (FD-SOI) because it achieves superior high temperature results compared with Partially Depleted (PD-SOI) technology. Our interest includes both technology considerations and circuit studies. We show that FD-SOI is an efficient way to implement high performance circuits for high temperature applications. Some essential aspects for the development of reliable high temperature SOI analog circuits are addressed: lifetime, voltage reference, noise and basic analog building blocks. We discuss some technological characteristics of our SOI process, then focus on lateral bipolar transistors (FD-SOI-CMOS Compatible) which are necessary for good bandgap references, compare noise performance in FD and PD SOI technologies, and finally present some of our latest results relating to critical analog building blocks for high temperature electronics

Keywords

CMOS analogue integrated circuits; high-temperature electronics; integrated circuit design; integrated circuit noise; integrated circuit reliability; integrated circuit technology; reference circuits; silicon-on-insulator; 200 to 300 C; SOI process technology; analog building blocks; bandgap references; fully-depleted SOI CMOS; high performance circuits; high temperature electronics; lateral bipolar transistors; lifetime; noise performance; reliable high temperature SOI analog circuits; technology considerations; voltage reference; Analog circuits; Bipolar transistors; CMOS process; CMOS technology; Circuit noise; Photonic band gap; Semiconductor films; Silicon on insulator technology; Subspace constraints; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

High Temperature Electronics, 1999. HITEN 99. The Third European Conference on

Conference_Location

Berlin

Print_ISBN

0-7803-5795-7

Type

conf

DOI

10.1109/HITEN.1999.827472

Filename

827472