Electrical contacts and degradation mechanisms

Author

Fecht, H.J. ; Mrosk, J.W. ; Werner, M.

Author_Institution

Ulm Univ., Germany

fYear

1999

fDate

6/21/1905 12:00:00 AM

Firstpage

163

Lastpage

167

Abstract

The proper choice of a metal for contact to a semiconductor (e.g. Si, GaAs, SiC, diamond at high temperatures) or oxide (piezoelectric substrate) is a major challenge, in particular for the design and fabrication of integrated circuits. As device dimensions in very large scale integration (VLSI) nowadays approach submicrometer scales only limited penetration of the metal into the semiconductor in the range of several nanometers can be accepted. An overview will be given regarding some basic materials issues for contact materials in particular considering the degradation at high temperatures

Keywords

VLSI; diffusion barriers; electrical contacts; high-temperature electronics; integrated circuit metallisation; integrated circuit reliability; semiconductor-metal boundaries; surface acoustic wave devices; C; GaAs; IC design; IC fabrication; SAW devices; Si; SiC; VLSI; diamond; diffusion barriers; electrical contacts; high temperature degradation mechanisms; high temperature electronics; limited metal penetration; materials issues; metal oxide contact; metallization schemes; overview; piezoelectric substrate; semiconductor metal contacts; Artificial intelligence; Bonding; Conductivity; Contacts; Degradation; Integrated circuit interconnections; Semiconductor device manufacture; Silicon carbide; Substrates; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

High Temperature Electronics, 1999. HITEN 99. The Third European Conference on

Conference_Location

Berlin

Print_ISBN

0-7803-5795-7

Type

conf

DOI

10.1109/HITEN.1999.827483

Filename

827483