0.25μm, 20V high performance complementary bipolar transistor with dual EPI and oxide-filled deep trench isolation for high frequency DC-DC converters

Author

Kwon, T. ; Haynie, S. ; Sadovnikov, A. ; Allard, P. ; Strout, J. ; Strachan, A.

Author_Institution

Adv. Process Technol. Dev. Group, Nat. Semicond., Portland, ME, USA

fYear

2011

Firstpage

172

Lastpage

175

Abstract

Power supply designers must increase the switching frequency of converters to meet industry demands for small sizes. In order to handle high switching frequency, a closed-loop DC-DC converter needs a high-speed error amplifier with low Rdson.Qg LDMOS power switches. In this paper, 0.25um, 20V high performance complementary bipolar transistors were developed for the high-speed error amplifier design. Dual epi was used to suppress parasitic bipolar behavior that leads to a latch-up. Also, an oxide-filled deep trench isolation was used to minimize parasitic capacitance. As a result, robust 5GHz NPN and 3GHz PNP transistors were integrated with a low Rdson.Qg LDMOS.

Keywords

DC-DC power convertors; isolation technology; microwave bipolar transistors; switching convertors; LDMOS power switches; NPN transistors; PNP transistors; closed-loop DC-DC converter; complementary bipolar transistor; dual EPI; frequency 3 GHz; frequency 5 GHz; high frequency DC-DC converters; high-speed error amplifier; latch-up; oxide-filled deep trench isolation; parasitic bipolar behavior; parasitic capacitance; power supply designers; size 0.25 mum; switching frequency; voltage 20 V; Bipolar transistors; Doping; Implants; Parasitic capacitance; Substrates; Switching frequency; Transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Power Semiconductor Devices and ICs (ISPSD), 2011 IEEE 23rd International Symposium on

Conference_Location

San Diego, CA

ISSN

1943-653X

Print_ISBN

978-1-4244-8425-6

Type

conf

DOI

10.1109/ISPSD.2011.5890818

Filename

5890818