• DocumentCode
    1692831
  • Title

    Evaluation of process variability on current for nanotechnologies devices

  • Author

    Meinhardt, Cristina ; Reis, Ricardo

  • Author_Institution
    Comput. Sci. Center - C3, Fed. Univ. of Rio Grande - FURG, Rio Grande, Brazil
  • fYear
    2012
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    The continuous shrinking of devices has introduced new challenges to integrated circuit design, mainly to deal with the parametric variations in process parameters. This paper presents an evaluation of the process variability on the current Ids of nanotechnologies devices, individually and simultaneously, taking into account the correlation among them. The results show that the deviation from mean value is quite significant ≈ 16% for high performance models. The variation of L has the dominant effect on the overall variation of the device in high performance models while the dominant effect on the overall variation of the device in low power models still being due to Vth variations. Lastly, the effect of process parameter variations deteriorates with technology scaling, with a considerable increase in the deviation from the 22 nm to 16 nm technology.
  • Keywords
    integrated circuit design; low-power electronics; nanotechnology; dominant effect; high performance models; integrated circuit design; low power models; nanotechnologies devices; parametric variations; process parameter variations; process variability; technology scaling; Integrated circuit modeling; Logic gates; MOSFETs; Nanoscale devices; Performance evaluation; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (LASCAS), 2012 IEEE Third Latin American Symposium on
  • Conference_Location
    Playa del Carmen
  • Print_ISBN
    978-1-4673-1207-3
  • Type

    conf

  • DOI
    10.1109/LASCAS.2012.6180361
  • Filename
    6180361