Effectiveness of the energy transport drift-diffusion model for submicrometer GaAs MESFETs

The energy transport drift-diffusion model is presented for submicron GaAs MESFETs, which accepts the physically-meaningful effective V-F characteristics depending on the distribution of the drift electric field or the drain voltage. They are evaluated using the 1D balance equations of momentum and energy. The drift velocity is described by a double-valued function of the drift electric field. This property is caused by the inertia motion of the Γ-valley electrons for the small drain voltage and by the hot electron effect for the large drain voltage. The present results well agree with the experimental and ensemble Monte Carlo simulation ones