• DocumentCode
    1693298
  • Title

    Computer simulation applied to physics and technology of graded band gap photodetectors

  • Author

    Kletskii, S.V.

  • Author_Institution
    Inst. of Semicond. Phys., Kiev, Ukraine
  • Volume
    1
  • fYear
    1995
  • Firstpage
    333
  • Abstract
    Some results of computer simulation of diffusion and drift-diffusion processes in graded band gap semiconductors are presented. A few semiconductor science and technology problems were studied for the purpose of AIIBVI material characteristic and development of infrared photodetectors with predetermined or improved parameters. The main mathematical and computer model are discussed
  • Keywords
    II-VI semiconductors; diffusion; digital simulation; infrared detectors; semiconductor device models; AIIBVI material characteristic; computer simulation; drift-diffusion processes; graded band gap semiconductors; infrared photodetectors; mathematical model; Computational modeling; Crystallization; Crystals; Earth; Photodetectors; Photonic band gap; Physics; Semiconductor materials; Solids; Space technology;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microelectronics, 1995. Proceedings., 1995 20th International Conference on
  • Conference_Location
    Nis
  • Print_ISBN
    0-7803-2786-1
  • Type

    conf

  • DOI
    10.1109/ICMEL.1995.500890
  • Filename
    500890
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1693298