Plasma-assisted printing and doping processes for manufacturing few-layer MoS2-based electronic and optoelectronic devices

MoS₂ and other emerging two-dimensional layered transition metal dichalcogenides hold the promise for making novel nanoelectronic, optoelectronic, and biosensing devices with new or significantly improved functionalities. To realize this potential and especially enable scale-up device applications of such atomically layered materials, new nanomanufacturing and material processing methods are needed for producing device structures of MoS₂ and other layered materials over large areas and tailoring the band structures of as-produced raw materials to achieve desirable electronic and photonic properties. In this paper, we systematically review our recent progress in developing new plasma-assisted printing and doping technologies for paving few-layer and multilayer MoS₂ structures over centimeter-scale areas and demonstrating new device applications in non-volatile memory transistors and thin-film photovoltaics. Our presented methods, although in the early development stage, hold significant potential to be further developed into upscalable manufacturing systems.