DocumentCode
1696327
Title
Realization of a new sensor concept: improved CCFET and SGFET type gas sensors in Hybrid Flip-Chip technology
Author
Pohle, R. ; Simon, E. ; Schneider, R. ; Fleischer, M. ; Meixner, H. ; Frerichs, H.-P. ; Lehmann, M.
Author_Institution
Corp. Technol., Siemens AG, Germany
Volume
1
fYear
2003
Firstpage
135
Abstract
A wide range of emerging applications in the consumer sector is envisioned for low-cost gas sensors with a high degree of adaptability to special measuring applications. The readout of gas induced work function changes via hybrid suspended gate field effect devices is already accepted as a promising technique for the realisation of a versatile, low-cost sensor platform. However, the industrialisation is still in the beginning. We report the realisation of the innovative, cheaply manufacturable Hybrid Flip-Chip (HFCFET) setup which was introduced. Using different modifications of improved ISFET and CCFET type transducers we compare the performance of these readout devices. Additionally, the design of the readout structures was improved compared to other reported devices. Profiting from the use of a standard CMOS process an analogue readout circuit was integrated in a CCFET type transducer enabling an on-chip reference and compensation of signal drifts.
Keywords
flip-chip devices; gas sensors; ion sensitive field effect transistors; CMOS; ISFET; gas sensors; hybrid flip-chip; hybrid suspended gate field effect devices; low-cost gas sensors; signal drifts; transducers; CMOS process; Conducting materials; Costs; Energy consumption; FETs; Flip chip; Gas detectors; Manufacturing industries; Transducers; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
TRANSDUCERS, Solid-State Sensors, Actuators and Microsystems, 12th International Conference on, 2003
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-7731-1
Type
conf
DOI
10.1109/SENSOR.2003.1215271
Filename
1215271
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