Josephson-CMOS memories

Author

Ghoshal, U. ; Hebert, Dave ; Van Duzer, T.

Author_Institution

California Univ., Berkeley, CA, USA

fYear

1993

Firstpage

54

Lastpage

55

Abstract

Results of an experiment on Josephson-CMOS memories show that these circuits have the potential to remove the memory bottleneck faced by superconductive electronics and the speed limitations of purely CMOS memories. The experiment demonstrates monolithic integrated Nb-AlO/sub x/-Nb Josephson-CMOS digital circuits operating at 4 K, the feasibility of Josephson-CMOS interface circuits with conversion delays of less than 150 ps, and fluxoelectronic current sensing of MOS RAM and CAM (content-addressable memory) cells using 4JL gates and SQUIDs (superconducting quantum interference devices).<>

Keywords

CMOS integrated circuits; Josephson effect; SQUIDs; aluminium compounds; content-addressable storage; integrated memory circuits; niobium; random-access storage; superconducting junction devices; superconducting memory circuits; 150 ps; 4 K; 4JL gates; 64 kbit; CAM; Josephson-CMOS memories; MOS RAM; Nb-AlO/sub x/-Nb; SQUIDs; content-addressable memory; digital circuits; fluxoelectronic current sensing; interface circuits; superconducting quantum interference devices; CADCAM; CMOS memory circuits; Computer aided manufacturing; Delay; Digital circuits; Random access memory; Read-write memory; SQUIDs; Superconducting devices; Superconductivity;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference, 1993. Digest of Technical Papers. 40th ISSCC., 1993 IEEE International

Conference_Location

San Francisco, CA, USA

Print_ISBN

0-7803-0987-1

Type

conf

DOI

10.1109/ISSCC.1993.280086

Filename

280086