DocumentCode
1700622
Title
A comparison of IGBT models for use in circuit design
Author
Githiari, A.N. ; Gordon, B.M. ; McMahon, R.A. ; Li, Z.M. ; Mawby, P.A.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
Volume
2
fYear
1997
Firstpage
1554
Abstract
In choosing an accurate IGBT model for power electronic circuit design, physics-based models are frequently preferred due to their high accuracy. In this paper, an experimental comparison of two such models is made, using parameters extracted from experimental measurements. The comparison focuses on a particular IGBT, the BUP202, in three situations typical of low power (600 V, 10 A) applications
Keywords
insulated gate bipolar transistors; power bipolar transistors; semiconductor device models; semiconductor device testing; 10 A; 600 V; BUP202 IGBT; IGBT models; experimental comparison; experimental measurements; low-power applications; physics-based models; power electronic circuit design; Circuit simulation; Circuit synthesis; Design engineering; Finite difference methods; Insulated gate bipolar transistors; Physics; Power electronics; Power engineering and energy; Power system modeling; Pulse width modulation;
fLanguage
English
Publisher
ieee
Conference_Titel
Power Electronics Specialists Conference, 1997. PESC '97 Record., 28th Annual IEEE
Conference_Location
St. Louis, MO
ISSN
0275-9306
Print_ISBN
0-7803-3840-5
Type
conf
DOI
10.1109/PESC.1997.618068
Filename
618068
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