DocumentCode
1701994
Title
Megas : Simulator Of GaAs MESFETS For Integrated Circuits
Author
Archambaud, Y. ; Berthon, A. ; Bouyer, JJ ; Caquot, E. ; Gabillard, B. ; Mottet, S. ; Poncet, A. ; Salmer, G.
Author_Institution
THOMSON-CSF
fYear
1987
Firstpage
93
Lastpage
98
Abstract
A program is presented for simulation of GaAs MESFET´s. It takes into account the thermalisation of majority carriers, surface effects and the substrate-related effects at the interface between the active layer and the semi-insulating material. The code provides a full simulation of the device from the fabrication to the electrical characterisation, thus beeing useful for the design and analysis of cir cuits as well as isolated components.
Keywords
Charge carrier processes; Circuit simulation; Electrons; Fabrication; Gallium arsenide; Impurities; MESFET integrated circuits; Poisson equations; Semiconductor materials; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
Conference_Location
Dublin, Ireland
Print_ISBN
0-906783-72-0
Type
conf
DOI
10.1109/NASCOD.1987.721128
Filename
721128
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