DocumentCode
1702286
Title
Thermal analysis of power GaAs MESFETs
Author
Ghione, G. ; Golzio, P. ; Naldi, C.
Author_Institution
Politecnico di Torino
fYear
1987
Firstpage
195
Lastpage
200
Abstract
The paper presents a technique for the self-consistent simulation of power GaAs MESFETs accounting for Joule heating within the active region. The presence of dissipators is included through equivalent boundary conditions, thereby allowing the coupled electro-thermal simulation to be performed on a small portion of the device only. The approach is validated by comparison with large-scale thermal simulation. Results are presented on the effect of device heating on DC characteristics, and temperature distributions are discussed for devices with realistic mountings.
Keywords
Boundary conditions; Gallium arsenide; Heating; Integrated circuit modeling; Lattices; MESFETs; Poisson equations; Steady-state; Temperature distribution; Thermal conductivity;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
Conference_Location
Dublin, Ireland
Print_ISBN
0-906783-72-0
Type
conf
DOI
10.1109/NASCOD.1987.721179
Filename
721179
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