DocumentCode
1702555
Title
Calculation Of Series Resistance Of MISFETS Using Schwartz-Christoffel Transformation
Author
Lin, H.C. ; Huang, D.H.
Author_Institution
University of Maryland
fYear
1987
Firstpage
276
Lastpage
281
Abstract
The source and drain resistance of MISFETs can be calculated by means of Schwartz Christoffel transformation. This method, in general, can be applied to calculate the series resistance between two perpendicular electrodes such as those in MESFETs, MISFETs and thin film capacitors. The calculation shows that the series resistance due to current crowding can be many times larger than that calculated from multiplying the sheet resistance by the number of squares of diffusion.
Keywords
Educational institutions; Electric resistance; Electrodes; Equations; MESFETs; MISFETs; Proximity effect; Semiconductor process modeling; Thin film circuits; Transforms;
fLanguage
English
Publisher
ieee
Conference_Titel
Numerical Analysis of Semiconductor Devices and Integrated Circuits, 1987. NASECODE V. Proceedings of the Fifth International Conference on the
Conference_Location
Dublin, Ireland
Print_ISBN
0-906783-72-0
Type
conf
DOI
10.1109/NASCOD.1987.721192
Filename
721192
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