Proposal of a new type magneto-transistor

A new type magneto-transistor, which has a recombination region in the base region, is proposed and demonstrated to have a potential of very large sensitivity as an all silicon magnetic sensor. Operational principle of the magneto-transistor is as follows. When injected carrier (electrons) from the emitter E into the base B is deflected toward the recombination region R formed in the B region by application of the magnetic field H, the collector current Ic will extremely reduced because of the reduction of the transport factor β of the injected carrier. In this experiment, a planar type npn-bipolar transistor with the R region is formed on the SOI substrate. Although the prototype device has no good ohmic contact in base electrode, the ratio of change of Ic is over 30% at 1 kOe.