• DocumentCode
    1703826
  • Title

    Characterization Of The AlGaAs/GaAs Tunneling Emitter Bipolar Transistor

  • Author

    Najjar, F.E. ; Radulescu, D.C. ; Chen, Y.K. ; Wicks, G.W. ; Tasker, P.J. ; Eastman, L.F.

  • Author_Institution
    Cornell University
  • fYear
    1987
  • Firstpage
    284
  • Lastpage
    292
  • Keywords
    Artificial intelligence; Bipolar transistors; Charge carrier processes; Effective mass; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Semiconductor superlattices; Substrates; Tunneling;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in
  • Conference_Location
    Ithaca, NY, USA
  • Type

    conf

  • DOI
    10.1109/CORNEL.1987.721238
  • Filename
    721238
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1703826