Temperature Effects On AlGaAs/GaAs Double Barrier Diodes With High Peak-to-Valley Current Ratios

Author

Huang, C.I. ; lkossi-Anastasiou, K. ; Paulus, M.J. ; Bozada, C.A. ; Stutz, C.E. ; Jones, R.L. ; Evans, K.R.

Author_Institution

Wright Aeronautical Laboratories

fYear

1987

Firstpage

356

Lastpage

364

Keywords

Buffer layers; Diodes; Gallium arsenide; Laboratories; Low voltage; Molecular beam epitaxial growth; Silicon; Superlattices; Temperature; Tunneling;

fLanguage

English

Publisher

ieee

Conference_Titel

High Speed Semiconductor Devices and Circuits, 1987. Proceedings., IEEE/Cornell Conference on Advanced Concepts in

Conference_Location

Ithaca, NY, USA

Type

DOI

10.1109/CORNEL.1987.721246

Filename

721246

Link To Document