Carrier dependent gain characteristics of InGaP/GaAs nano-heterostructure

This paper reports the lasing characteristics of SCH based InGaP/GaAs nano-heterostructure such as anti-guiding factor (a substantial parameter for optical gain), material gain, mode gain, and carrier induced refractive index change. The simulation studies also cover the variation in material gain and mode gain with respect to lasing wavelength and photonic energy. Furthermore, gain calculations have also been reported for different carrier concentrations. The theoretical results achieved reveal that maximum gain of 2921.535 /cm appears at wavelength 0.625 μm and corresponding photonic energy is 1.98 eV. In addition, the analysis also shows that the proposed nano heterostructure provides more optical gain in TE polarization mode than TM mode. A significant gain achieved at lasing wavelength promises the utility of proposed structure in optical fibre communication systems.