Effects of body contact on output characteristics of 0.5 micron MOSFET on thick bonded SOI substrate

Effects of body contact on the output characteristics are investigated on 0.5 micron gate length MOSFET. The device employs bulk silicon CMOS technology that is fabricated on a 1.5 μm thick device layer of a bonded silicon-on-insulator (BSOI) substrate. Body contact is achieved through the well contact underneath LOCOS above the buried oxide. Current-voltage measurements are carried out to characterize the output characteristics comparing with and without contact to the substrate. Results of partially-depleted SOI devices are compared to 0.5 micron MOSFET on bulk silicon wafer. Results show that floating-body devices exhibit kink in the saturation region with earlier breakdown voltage. Applying body contact for 0.5 micron SOI device eliminates the kink and delays the breakdown voltage. Body-contacted SOI device in turn is found to exhibit negative resistance behaviour for higher gate voltages in the saturation region.