A novel E-SIMOX SOI high voltage device structure with shielding trench

Author

Luo, Xiaorong ; Zhang, Bo ; Li, Zhaoji

Author_Institution

Coll. of Microelectron. & Solid-State Electron., Univ. of Electron. Sci. & Technol. of China, Chengdu, China

Volume

2

fYear

2005

Lastpage

1406

Abstract

A new E-SIMOX high voltage device structure with shielding trench (ST) and its breakdown mechanism with a self-adapted interface charge are proposed in this paper. Based on the full continuity principle of electric displacement, the interface charges enhance the vertical electric field of the buried oxide remarkably and reduce the vertical electric field of the Si layer, which shields the Si layer from the high electric field. The vertical electric field and breakdown characteristics are researched for different device structure parameters, with ST, using a 2D device simulator. The electric field of the buried oxide increases from below 100 V/μm to about 600 V/μm. This breaks through the limitation of breakdown voltage of normal SOI devices and expands the application field of SOI devices.

Keywords

SIMOX; power MOSFET; semiconductor device breakdown; silicon-on-insulator; E-SIMOX device; SOI LDMOS; SOI device breakdown voltage limitations; Si-SiO₂; breakdown mechanism; buried oxide vertical electric field; electric displacement full continuity principle; high voltage device structure; self-adapted interface charge; shielding trench; Bonding; Dielectric devices; Doping; Educational institutions; Electric breakdown; Gaussian processes; Large Hadron Collider; Silicon; Solid state circuits; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Communications, Circuits and Systems, 2005. Proceedings. 2005 International Conference on

Print_ISBN

0-7803-9015-6

Type

conf

DOI

10.1109/ICCCAS.2005.1495368

Filename

1495368