Scaling-down effects on the electrical performance of top-contact pentacene TFTs

Author

Lee, Jong Duk ; Jin, Sung Hun ; Jung, Keum Dong ; Park, Byung-Gook

Author_Institution

Inter-Univ. Semicond. Res. Center & Sch. of Electr. Eng., Seoul Nat. Univ., South Korea

fYear

2004

Abstract

Top-contact pentacene TFTs were successfully scaled down to the level of L_C - 1.8 μm by using silicon nitride membrane shadow mask Pentacene TFT with the grain size of a few micrometer showed high off-current even in the depletion mode when L_C of pentacene TFT was reduced to the length less than 10 μm High mobility of 0 2 cm²/Vsec and good on-off current ratio more than 10⁷ were obtained by using a two step deposition (TSD) technique even for the pentacene TFT with L_C=1.8 μm. The grain size plays a key role in determining the off-current level of top-contact pentacene TFTs with L_C less than 10 μm.

Keywords

grain size; scaling phenomena; silicon compounds; thin film transistors; 1.8 micron; 10 micron; depletion mode; electrical performance; grain size; high off-current level; scaling-down effect; shadow mask Pentacene TFT; silicon nitride membrane; top-contact pentacene TFT; two step deposition; Biomembranes; Electrodes; Grain size; Lithography; Organic semiconductors; Pentacene; Radiofrequency identification; Silicon; Temperature; Thin film transistors;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Electronics, 2004. ICSE 2004. IEEE International Conference on

Print_ISBN

0-7803-8658-2

Type

conf

DOI

10.1109/SMELEC.2004.1620973

Filename

1620973