DocumentCode
1706808
Title
Physical design oriented DRAM Neighborhood Pattern Sensitive Fault testing
Author
Sfikas, Yiorgos ; Tsiatouhas, Yiorgos
Author_Institution
Dept. of Comput. Sci., Univ. of Ioannina, Ioannina
fYear
2009
Firstpage
108
Lastpage
113
Abstract
Although the Neighborhood Pattern Sensitive Fault (NPSF) model is recognized as a high quality fault model for memory arrays, the excessive test application time cost associated with it, compared to other fault models, restricts its wide adoption for memory testing. In this work we exploit the physical design (layout) of folded DRAM memory arrays to introduce a new neighborhood type for NPSF testing and a pertinent test and locate algorithm. This algorithm reduces drastically the test application time (about 58% with respect to the well known Type-1 neighborhood) aiming to make the NPSF model also a cost attractive choice. In addition, we introduce the Neighborhood Word-Line Sensitive Fault model and the corresponding test algorithm to cover those faults along with NPSFs, achieving test application time cost reduction from 33% to 41%, depending on various assumptions, with respect to the Type-1 neighborhood.
Keywords
DRAM chips; circuit testing; DRAM memory arrays; DRAM neighborhood pattern sensitive fault testing; memory testing; Algorithm design and analysis; Application software; Computer science; Costs; Fault detection; Leakage current; Pattern recognition; Random access memory; Testing; Δ-Type neighborhood; DRAM Testing; Memory Testing; Neighborhood Pattern Sensitive Fault (NPSF) model; Neighborhood Word-Line Sensitive Fault (NWSF) model;
fLanguage
English
Publisher
ieee
Conference_Titel
Design and Diagnostics of Electronic Circuits & Systems, 2009. DDECS '09. 12th International Symposium on
Conference_Location
Liberec
Print_ISBN
978-1-4244-3341-4
Electronic_ISBN
978-1-4244-3340-7
Type
conf
DOI
10.1109/DDECS.2009.5012108
Filename
5012108
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