Modeling of two-dimensional dynamic temperature distribution of a LPCVD process and control design by MPC

Low pressure chemical vapor deposition (LPCVD) is a familiar method for thin film growing in semiconductor manufacture. The surface temperature of wafers is studied in this work which plays the most important role in impacting the film´s thickness and roughness. The calculation of configuration factors which are the key varibles in LPCVD process thermal modeling is shown. Then, the two-dimensional dynamic model of temperature distribution of wafers is established by studying the radiation and conduction in the depositing furnace. The result of this simulation model is compared with which in reference article. Finally, the temperature distribution is controlled to keep it uniform by predict control designing.