Third-harmonic injection technique applied to a 5.87-to-7.56GHz 65nm CMOS Class-F oscillator with 192dBc/Hz FOM

Author

Babaie, Masoud ; Staszewski, Robert Bogdan

Author_Institution

Delft Univ. of Technol., Delft, Netherlands

fYear

2013

Firstpage

348

Lastpage

349

Abstract

The design of CMOS oscillators for the strict phase noise (PN) requirements of cellular standards, as well as low power consumption and thus high figure-of-merit (FoM), is very challenging. For example, in a GSM mobile station (MS), the PN requirement is -162dBc/Hz at 20MHz offset from a 915MHz carrier for a local oscillator (LO). On the other hand, LO power efficiency is a critical factor for a long-lasting battery life.

Keywords

CMOS integrated circuits; cellular radio; harmonic analysis; oscillators; phase noise; power consumption; CMOS class-F oscillator; CMOS oscillator design; FoM; GSM mobile station; LO power efficiency; MS; PN requirement; cellular standard; figure-of-merit; frequency 20 MHz; frequency 5.87 GHz to 7.56 GHz; frequency 915 MHz; local oscillator; long-lasting battery life; power consumption; size 65 nm; strict phase noise; third-harmonic injection technique; CMOS integrated circuits; CMOS technology; Phase noise; Resonant frequency; Solid state circuits; Tuning;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid-State Circuits Conference Digest of Technical Papers (ISSCC), 2013 IEEE International

Conference_Location

San Francisco, CA

ISSN

0193-6530

Print_ISBN

978-1-4673-4515-6

Type

conf

DOI

10.1109/ISSCC.2013.6487764

Filename

6487764