New method for the parameter extraction in Si MOSFETs after hot carrier injection

Author

Hardillier, S. ; Mourrain, C. ; Bouzid, M.J. ; Ghibaudo, G.

Author_Institution

CNET, Meylan, France

fYear

1997

Firstpage

63

Lastpage

66

Abstract

A new parameter extraction method is proposed for the monitoring of hot carrier injection (HCI) degradation in Si MOSFET´s allowing details of the contributions of the channel and access source-drain extension regions to be obtained. Thanks to this method, MDD and LATID architectures have been successfully compared. It is found that MDD devices suffer more from channel degradation, whereas for the LATID devices, the access SD resistance constitutes the worst case parameter

Keywords

CMOS integrated circuits; MOSFET; elemental semiconductors; hot carriers; integrated circuit reliability; integrated circuit testing; semiconductor device reliability; semiconductor device testing; silicon; 0.25 micron; LATID architecture; MDD architecture; Si; Si MOSFETs; access source-drain extension regions; channel degradation; channel extension regions; hot carrier degradation; hot carrier injection; parameter extraction; submicron CMOS technologies; CMOS technology; Condition monitoring; Degradation; Hot carrier injection; Human computer interaction; MOS devices; MOSFETs; Parameter extraction; Stress; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronic Test Structures, 1997. ICMTS 1997. Proceedings. IEEE International Conference on

Conference_Location

Monterey, CA

Print_ISBN

0-7803-3243-1

Type

conf

DOI

10.1109/ICMTS.1997.589336

Filename

589336