• DocumentCode
    171044
  • Title

    A 53 to 84 GHz CMOS power amplifier with 10.8-dBm output power and 31 GHz 3-dB bandwidth

  • Author

    Po-Han Chiang ; Wei-Heng Lin ; Tzu-Yuan Huang ; Huei Wang

  • Author_Institution
    Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
  • fYear
    2014
  • fDate
    1-6 June 2014
  • Firstpage
    1
  • Lastpage
    3
  • Abstract
    A 53-to-84 GHz wideband power amplifier (PA) is implemented in 65-nm GP CMOS technology. This PA exhibits a measured small signal gain of 29.1 ± 1.5 dB from 53 to 84 GHz and a Psat of 10.8 dBm, P1dB of 7.2 dBm, power added efficiency (PAE) of 9.7% at 80 GHz at drain voltage of 1.2 V. The DC consumption is 123 mW.
  • Keywords
    CMOS analogue integrated circuits; millimetre wave integrated circuits; millimetre wave power amplifiers; wideband amplifiers; GP CMOS technology; PA; efficiency 9.7 percent; frequency 53 GHz to 84 GHz; power 123 mW; size 65 nm; voltage 1.2 V; wideband power amplifier; BiCMOS integrated circuits; Broadband communication; CMOS integrated circuits; CMOS process; Capacitors; US Department of Defense; CMOS power amplifier; E-band; V-band; broadband;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave Symposium (IMS), 2014 IEEE MTT-S International
  • Conference_Location
    Tampa, FL
  • Type

    conf

  • DOI
    10.1109/MWSYM.2014.6848312
  • Filename
    6848312
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=171044