Parameterized modeling of open-circuit critical volume for three-dimensional defects in VLSI processing

Author

Kidambi, M.K. ; Tyagi, A. ; Madani, M.R. ; Bayoumi, M.A.

Author_Institution

Center for Adv. Comput. Studies, Southwestern Louisiana Univ., Lafayette, LA, USA

fYear

1994

Firstpage

333

Lastpage

338

Abstract

In this paper, we study the impact of three-dimensional (3-D) physical defects on the functionality of integrated circuit (IC) structures. A practical extension to Pineda de Gyvez and Dani´s (1992) method of IC critical volume modeling for open-circuits due to 3-D defects is presented. According to their approach, an open-circuit may result only when any two of the three dimensions of the defect are greater than the corresponding dimensions of the conducting pattern. In this way, their treatment can be considered more of a physical than electrical in nature. We analyze the increase in the resistance of a conductor due to the presence of a defect. The maximum tolerable increase in the resistance of a conductor is considered as the criterion for an open-circuit. Based on this analysis, new analytical expressions for critical volume are obtained. Some suggestions are made regarding yield modeling in presence of 3-D defects in integrated circuits

Keywords

VLSI; integrated circuit technology; semiconductor device models; 3D physical defects; IC critical volume modeling; VLSI processing; integrated circuit structures; open-circuit critical volume; open-circuits; parameterized modeling; three-dimensional defects; Building materials; Conductors; Coupling circuits; Electric resistance; Explosives; Integrated circuit modeling; Integrated circuit technology; Integrated circuit yield; Physics computing; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Design, 1994., Proceedings of the Seventh International Conference on

Conference_Location

Calcutta

ISSN

1063-9667

Print_ISBN

0-8186-4990-9

Type

conf

DOI

10.1109/ICVD.1994.282714

Filename

282714