• DocumentCode
    1715616
  • Title

    Properties of high index-contrast wired GaInAsP waveguides with benzocyclobutene on Si substrate

  • Author

    Enomoto, Haruki ; Inoue, Keita ; Okumura, Tadashi ; Nguyen, Hanh Duc ; Nishiyama, Nobuhiko ; Atsumi, Yuki ; Kondo, Simon ; Arai, Shigehisa

  • Author_Institution
    Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo
  • fYear
    2009
  • Firstpage
    347
  • Lastpage
    350
  • Abstract
    500 times 150 nm2 GaInAsP wired waveguides were fabricated on a Si substrate by adhesive bonding using benzocyclobutene (BCB). The propagation loss of 2.1 dB/mm and 1.5 mum-radius bending loss of less than 1.0 dB/90deg were obtained.
  • Keywords
    III-V semiconductors; adhesive bonding; gallium compounds; indium compounds; optical fabrication; optical waveguides; organic compounds; silicon; GaInAsP; Si; adhesive bonding; bending loss; benzocyclobutene; high index-contrast wired waveguides; optical interconnections; propagation loss; size 1.5 mum; size 150 nm; size 500 nm; Biomembranes; High speed optical techniques; III-V semiconductor materials; Indium phosphide; Optical devices; Optical feedback; Optical interconnections; Optical refraction; Optical waveguides; Substrates;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide & Related Materials, 2009. IPRM '09. IEEE International Conference on
  • Conference_Location
    Newport Beach, CA
  • ISSN
    1092-8669
  • Print_ISBN
    978-1-4244-3432-9
  • Electronic_ISBN
    1092-8669
  • Type

    conf

  • DOI
    10.1109/ICIPRM.2009.5012435
  • Filename
    5012435
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1715616